Non-volatile semiconductor memory and method for manufacturing a non-volatile semiconductor memory

ABSTRACT

An non-volatile semiconductor memory having a linear arrangement of a plurality of memory cell transistors, includes: a first semiconductor layer having a first conductivity type; a second semiconductor layer provided on the first semiconductor layer to prevent diffusion of impurities from the first semiconductor layer to regions above the second semiconductor layer; and a third semiconductor layer provided on the second semiconductor layer, including a first source region having a second conductivity type, a first drain regions having the second conductivity type and a first channel region having the second conductivity type for each of the memory cell transistors.

CROSS REFERENCE TO RELATED APPLICATIONS AND INCORPORATION BY REFERENCE

This application is a Division of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 11/608,393, filed Dec. 8, 2006,and claims the benefit of priority under 35 U.S.C. §119 from JapanesePatent Application No. P2005-365466, filed Dec. 19, 2005, the entirecontents of each which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This present invention relates to a non-volatile semiconductor memoryand a method for manufacturing the same.

2. Description of the Related Art

An electrically erasable programmable read-only memory (EEPROM) is knownas a non-volatile semiconductor memory. In the EEPROM, a cell array isconfigured in such a way that a memory cell transistor is arranged at anintersection where a word line in the row direction and a bit line inthe column direction cross over each other. Among EEPROMs, the NANDflash EEPROM in which a plurality of memory cell transistors areconnected in series, and which can erase all the written datasimultaneously, has been in wide use.

A memory cell transistor of the NAND type flash EEPROM includes n-typesource and drain regions; and a p channel region between the source anddrain regions. A stacked gate structure is formed on the channel regionin which a control gate electrode and a floating gate electrode arestacked.

As the memory cell transistor has been minaturized, an interval betweenthe source and drain regions of the memory cell transistor has become sonarrow that influence of the short channel effect has increased in theNAND flash EEPROM.

SUMMARY OF THE INVENTION

The present invention provides a non-volatile semiconductor memory and amethod for manufacturing thereof which can decrease a short channeleffect of a memory cell transistor.

An aspect of the present invention inheres in a non-volatilesemiconductor memory having a linear arrangement of a plurality ofmemory cell transistors, including: a first semiconductor layer having afirst conductivity type; a second semiconductor layer provided on thefirst semiconductor layer so as to prevent diffusion of impurities fromthe first semiconductor layer to regions above the second semiconductorlayer; and a third semiconductor layer provided on the secondsemiconductor layer, including a first source region having a secondconductivity type, a first drain region having the second conductivitytype, and a first channel region having the second conductivity typebetween the first source and drain regions for each of the memory celltransistors so as to establish the linear arrangement.

Another aspect of the present invention inheres in a method formanufacturing a non-volatile semiconductor memory including: forming asecond semiconductor layer on a first semiconductor layer having a firstconductivity type; forming a third semiconductor layer having a secondconductivity type on the second semiconductor layer; forming a gateinsulating film on the third semiconductor layer; depositing a firstconductive layer on the gate insulating film; depositing an insulatingfilm on the first conductive layer; depositing a second conductive layeron the insulating film; forming a groove penetrating the secondconductive layer, the insulating layer and the first conductive layer soas to define a control gate electrode, an inter-electrode insulatingfilm under the control gate electrode and a floating gate electrodeunder the inter-electrode insulating film; and forming a memory celltransistor comprising a source region having the second conductivitytype, a drain region having the second conductivity type and a channelregion having the second conductivity type on the third semiconductorlayer by ion implantation to the third semiconductor layer through thegroove.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto an embodiment of the present invention.

FIG. 2 is a plan view showing an example of the cell array of thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 3 is a cross-sectional view in the row direction showing an exampleof the cell array of the non-volatile semiconductor memory according tothe embodiment of the present invention.

FIG. 4 is an equivalent circuit diagram showing an example of the cellarray of the non-volatile semiconductor memory according to theembodiment of the present invention.

FIG. 5 is a graph showing an example of I-V characteristic of a memorycell transistor of the non-volatile semiconductor memory according tothe embodiment of the present invention.

FIG. 6 is a graph showing an example of operation voltage being suppliedto a line of the cell array of the non-volatile semiconductor memoryaccording to the embodiment of the present invention.

FIG. 7 is an equivalent circuit diagram for explaining a writingoperation of the non-volatile semiconductor memory according to theembodiment of the present invention.

FIG. 8 is an equivalent circuit diagram for explaining an erasingoperation of the non-volatile semiconductor memory according to theembodiment of the present invention.

FIG. 9 is an equivalent circuit diagram for explaining reading operationof the non-volatile semiconductor memory according to the embodiment ofthe present invention.

FIG. 10 is a cross-sectional view for explaining a floating gateelectrode, which does not store electrons of the memory cell transistorof the non-volatile semiconductor memory according to the embodiment ofthe present invention.

FIG. 11 is a cross-sectional view for explaining how the floating gateelectrode stores electrons of the memory cell transistor of thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 12A is a cross-sectional view in the column direction (I-Idirection of FIG. 2) showing an example of a method for manufacturingthe non-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 12B is a cross-sectional view in the row direction (II-II directionof FIG. 2) showing the example of the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 13A is a cross-sectional view in the column direction after theprocess of FIG. 12A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 13B is a cross-sectional view in the row direction after theprocess of FIG. 12B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 14A is a cross-sectional view in the column direction after theprocess of FIG. 13A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 14B is a cross-sectional view in the row direction after theprocess of FIG. 13B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 15A is a cross-sectional view in the column direction after theprocess of FIG. 14A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 15B is a cross-sectional view in the row direction after theprocess of FIG. 14B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 16A is a cross-sectional view in the column direction after theprocess of FIG. 15A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 16B is a cross-sectional view in the row direction after theprocess of FIG. 15B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 17A is a cross-sectional view in the column direction after theprocess of FIG. 16A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 17B is a cross-sectional view in the row direction after theprocess of FIG. 16B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 18A is a cross-sectional view in the column direction after theprocess of FIG. 17A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 18B is a cross-sectional view in the row direction after theprocess of FIG. 17B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 19A is a cross-sectional view in the column direction after theprocess of FIG. 18A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 19B is a cross-sectional view in the row direction after theprocess of FIG. 18B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 20A is a cross-sectional view in the column direction after theprocess of FIG. 19A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 20B is a cross-sectional view in the row direction after theprocess of FIG. 19B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 21A is a cross-sectional view in the column direction after theprocess of FIG. 20A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 21B is a cross-sectional view in the row direction after theprocess of FIG. 20B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 22A is a cross-sectional view in the column direction after theprocess of FIG. 21A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 22B is a cross-sectional view in the row direction after theprocess of FIG. 21B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 23A is a cross-sectional view in the column direction after theprocess of FIG. 22A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 23B is a cross-sectional view in the row direction after theprocess of FIG. 22B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 24A is a cross-sectional view in the column direction after theprocess of FIG. 23A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 24B is a cross-sectional view in the row direction after theprocess of FIG. 23B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 25A is a cross-sectional view in the column direction after theprocess of FIG. 24A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 25B is a cross-sectional view in the row direction after theprocess of FIG. 24B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 26A is a cross-sectional view in the column direction after theprocess of FIG. 25A showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 26B is a cross-sectional view in the row direction after theprocess of FIG. 25B showing the method for manufacturing thenon-volatile semiconductor memory according to the embodiment of thepresent invention.

FIG. 27 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto a first modification of the present invention.

FIG. 28 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto a seventh modification of the present invention.

FIG. 29 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto an eighth modification of the present invention.

FIG. 30 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto a ninth modification of the present invention.

FIG. 31 is a cross-sectional view in the column direction showinganother example of a cell array of a non-volatile semiconductor memoryaccording to a ninth modification of the present invention.

FIG. 32 is a cross-sectional view showing an example of a method formanufacturing the non-volatile semiconductor memory according to a tenthmodification of the present invention.

FIG. 33 is a cross-sectional view after the process of FIG. 32 showingthe method for manufacturing the non-volatile semiconductor memoryaccording to the tenth modification of the present invention.

FIG. 34 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto an eleventh modification of the present invention.

FIG. 35 is a block diagram showing an example of a flash memory systemusing a non-volatile semiconductor memory according to a twelfthmodification of the present invention.

FIG. 36 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory accordingto other embodiment of the present invention.

FIG. 37 is a cross-sectional view in the column direction showinganother example of a cell array of a non-volatile semiconductor memoryaccording to the other embodiment of the present invention.

FIG. 38 is a cross-sectional view in the column direction showing anexample of a cell array of a non-volatile semiconductor memory as acomparative example.

FIG. 39 is a cross-sectional view in the row direction showing anexample of the cell array of a non-volatile semiconductor memory as thecomparative example.

FIG. 40 is a cross-sectional view in the column direction showinganother example of a cell array of a non-volatile semiconductor memoryas a comparative example.

DETAILED DESCRIPTION OF THE INVENTION

An embodiment and various modifications of the present invention will bedescribed with reference to the accompanying drawings. It is to be notedthat the same or similar reference numerals are applied to the same orsimilar parts and elements throughout the drawings, and the descriptionof the same or similar parts and elements will be omitted or simplified.

Generally and as it is conventional in the representation ofsemiconductor devices, it will be appreciated that the various drawingsare not drawn to scale from one figure to another nor inside a givenfigure, and in particular that the layer thicknesses are arbitrarilydrawn for facilitating the reading of the drawings.

In the embodiment of the present invention, the “first conductivitytype” and “second conductivity type” are mutual opposites. In otherwords, when the first conductivity type is an n-type then the secondconductivity type will be a p-type, and vice versa. Below, the case withthe first conductivity type as a p-type and the second conductivity typeas an n-type will be described. However, another case with the firstconductivity type as an n-type and the second conductivity type as ap-type is also contemplated. When n-type and p-type conductivities arechanged to the opposite type, polarizations of applied voltages are alsooppositely changed.

A non-volatile semiconductor memory according to an embodiment of thepresent invention is an NAND flash EEPROM in which a plurality of memorycell transistors are arranged in a matrix. As shown in FIG. 1, thenon-volatile semiconductor memory includes: a first semiconductor layer(semiconductor substrate) 1 having a first conductivity type (p⁺-type);a second semiconductor layer 2 provided on the first semiconductor layer1 so as to prevent a diffusion of impurities from the firstsemiconductor layer 1 to regions above the second semiconductor layer 2;and a third semiconductor layer 3 provided on the second semiconductorlayer 2. source regions (first source regions) 421 to 42 n having asecond conductivity (n⁺) type, drain regions (first drain regions) 422to 42(n+1) having a second conductivity (n⁺) type, and channel regions(first channel regions) 411 to 41 n having a second conductivity (n⁻)type between the source regions 421 to 42 n and the drain regions 422 to42(n+1) for each of the pluraliry memory cell transistors MT₁₁ toMT_(1n) that are provided periodically in the third semiconductor layer3.

FIG. 1 is a cross-sectional view of the non-volatile semiconductormemory taken along the I-I line in the column direction, as shown inFIG. 2. In FIG. 1, for example, n (n is an integer) memory celltransistors MT₁₁ to MT_(1n) are arranged in the column direction so asto be adjacent to one another. Each of the memory cell transistors Mt₁₁to MT_(1n) includes a stacked gate structure in which the floating gateelectrodes 13 and the control gate electrodes 15 are stacked.

For example, the memory cell transistor MT₁₁ includes: the source anddrain regions 421 and 422 having n⁺-type conductivity disposed in thethird semiconductor layer 3; the channel regions 411 having n⁻-typeconductivity interposed between the source and drain regions 421 and422; the floating gate electrode 13 insulated and provided on thechannel regions 411; and the control gate electrode 15 insulated andprovided on the floating gate electrode 13. The memory cell transistorMT₁₂ includes: the source and drain regions 422 and 423 having n⁺-typeconductivity disposed in the third semiconductor layer 3; the channelregions 412 having n⁻-type conductivity interposed between the sourceand drain regions 422 and 423; the floating gate electrode 13 insulatedand provided on the channel regions 412; and the control gate electrode15 insulated and provided on the floating gate electrode 13. The memorycell transistor MT_(1n) includes: the source and drain regions 42 n and42(n+1) having n⁺-type conductivity disposed in the third semiconductorlayer 3; the channel regions 41 n having n⁻-type conductivity interposedbetween the source and drain regions 42 n and 42(n+1); the floating gateelectrode 13 insulated and provided on the channel regions 41 n; and thecontrol gate electrode 15 insulated and provided on the floating gateelectrode 13.

A floating gate electrode 13 is disposed on each of the channel regions411 to 41 n with a gate insulating film (tunnel oxide film) 12interposed there between. A control gate electrode 15 is disposed oneach of the floating gate electrodes 13 with an interelectrodeinsulating film 14 interposed there between.

The source and drain regions 421 to 42(n+1) are shared by the memorycell transistors MT₁₁ to MT_(1n), adjacent to each other in the columndirection. “Shared region” refers to a common region which functions ina way that a source region for a memory cell transistor serves as adrain region for an adjacent memory cell transistor. For example, thedrain region 422 of one memory cell transistor MT₁₁ serves as the sourceregion 422 of another memory cell transistor MT₁₂, adjacent to thememory cell transistor MT₁₁. The memory cell transistors MT₁₁ to MT_(mn)are arranged in a plurality of parallel columns so that the sourceregions 421 to 42 n, the channel regions 411 to 41 n and the drainregions 422 to 42(n+1) are isolated from the corresponding sourceregions, channel regions and drain regions in other columns.

Each of the memory cell transistors Mt₁₁ to MT_(1n) is a depletion modeMIS transistor or enhancement mode MIS transistor. The “MIS transistor”is an insulated gate transistor, such as a field effect transistor (FET)and a static induction transistor (SIT), which controls channel currentby gate voltage through an insulating film (gate insulating film)interposed between a gate electrode and a channel region. A MISFET inwhich a silicon oxide film (SiO₂ film) is used as a gate insulating filmis referred to as a metal oxide semiconductor field effect transistor(MOSFET).

Whether the memory cell transistors MT₁₁ to MT_(1n) are depletion modeor enhancement mode is determined by the extent of the depletion layerin the channel regions 411 to 41 n at thermal equilibrium state. Whenthe channel regions 411 to 41 n are not depleted entirely in a thermalequilibrium state, that is, the channel regions 411 to 41 n arepartially depleted, or are not depleted and leave a conductive layer inthe channel regions 411 to 41 n of the memory cell transistors MT₁₁ toMT_(1n) are depletion mode transistors. On the other hand, when thechannel regions 411 to 41 n are depletioned entirely at thermalequilibrium state, the memory cell transistors MT₁₁ to MT_(1n) areenhancement mode transistors. Whether the channel regions 411 to 41 nare entirely depleted or leave a conductive layer at thermal equilibriumstate is determined by an impurity concentration and thickness of thechannel regions 411 to 41 n, and can be adjusted appropriately.

In addition, SiO₂, silicon nitride (Si₃N₄), tantalum oxide (Ta₂O₅),titanium oxide (TiO₂), alumina (Al₂O₃), zirconium oxide (ZrO₂) and thelike can be used as a material for the gate insulating film of the MIStransistor.

Si₃N₄, Ta₂O₅, TiO₂, Al₂O₃, ZrO₂, oxide/nitride/oxide (ONO) phosphorsilicate glass (PSG), boron phosphor silicate glass (BPSG), siliconoxide nitride (SiON), barium titanate (BaTiO₃), silicon oxide fluoride(SiO_(x)F_(x)), and organic resins such as polyimide can be used asmaterials for the inter-electrode insulating film 14.

The first semiconductor layer 1 is, for example, a silicone (Si)substrate. The second semiconductor layer 2 serves to prevent an upwarddiffusion of impurities from the first semiconductor layer 1 to regionsabove the second semiconductor layer 2. The second semiconductor layer 2is, for example, a p⁻-type epitaxial layer having with an impurityconcentration lower than the impurity concentration of the firstsemiconductor layer 1. The third semiconductor layer 3 is, for example,an epitaxial layer. In the third semiconductor layer 3, the source anddorain regions 421 to 42(n+1), the channel regions 411 to 41 n and thelike are provided.

Each of two select gate transistors STS₁ and STD₁ is arranged in, andneighbouring to, each end of the column direction of the memory celltransistors MT₁₁ to MT_(1n). The select gate transistor STS₁ is anenhancement MIS transistor including: a n⁺-type drain region (seconddrain region) 421 which is common to a source region 421 of the memorycell transistor MT₁₁ positioned in one end of the linear arrangement ofthe memory cell transistors MT₁₁ to MT_(1n) in the column direction; ap-type channel region (second channel region) 42 arranged so as to beadjacent to the drain region 421; a n⁺-type source region (second sourceregion) 43 arranged so as to be adjacent to the channel region 42; andselect gate electrodes 13 a and 15 a arranged above the channel region42 with the gate insulating film 12 interposed between the channelregion 42 and the set of select gate electrodes 13 a and 15 a. The drainregion 421, the channel region 42 and the source region 43 are arrangedin the third semiconductor layer 3. A source line contact plug 18 isarranged on the source region 43 so that the source line contact plug 18is adjacent to the select gate transistor STS₁.

Alternatively, the select gate transistor STD₁ is an enhancement MIStransistor including: a n⁺-type source region (third source region)42(n+1) which is common to a drain region 42(n+1) of the memory celltransistor MT_(1n) positioned in another end of the linear arrangementof the memory cell transistors MT₁₁ to MT_(1n) in the column direction;a p-type channel region (third channel region) 44 arranged so as to beadjacent to the source region 42(n+1); a n⁺-type drain region (thirddrain region) 45 arranged so as to be adjacent to the channel region 44;select gate electrodes 13 b and 15 b arranged above the channel region44 with the gate insulating film 12 interposed between the channelregion 44 and the set of select gate electrodes 13 b and 15 b. Thesource region 42(n+1), the channel region 44 and the drain region 45 arearranged in the third semiconductor layer 3. A bit line contact plug 17is arranged on the drain region 45 so that the bit line contact plug 17is adjacent to the select gate transistor STD₁.

FIG. 2 shows m×n (m and n are integers) memory cell transistors MT₁₁ toMT_(1n), MT₂₁ to MT_(2n), . . . , MT_(m1) to MT_(mn) provided in amatrix. As shown in FIG. 2, the following elements are arranged in thecolumn direction of a cell array in the non-volatile semiconductormemory according to the present embodiment: a source line SL connectedto the source line contact plug 18; a select gate line SGS connected tothe select gate electrodes 13 a and 15 a of a select gate transistorSTS₁; word lines WL₁ to WL_(n) connected to the control gate electrodes15 of the respective memory cell transistors MT₁₁ to MT_(1n); and aselect gate line SGD connected to the select gate electrodes 13 b and 15b of the select gate transistor STD₁. Bit lines BL₁, BL₂, . . . ,BL_(m), connected to the bit line contact plug 17, are arranged in therow direction so as to extend in the column direction.

FIG. 3 is a cross-sectional view of the non-volatile semiconductormemory taken along the II-II line in the row direction shown in FIG. 2.As shown in FIG. 3, an element isolation insulating film 6 is buriedbetween the floating gate electrode 13 and the channel region 41 of eachof the memory cell transistors MT₁₁ and MT₂₁, which are adjacent to oneanother in the row direction. Elements of the respective memory celltransistors MT₁₁ and MT₂₁, which are adjacent to one another in the rowdirection, are completely isolated from one another by element isolationinsulating film 6. A peripheral circuit of a cell array, arranged on thefirst semiconductor layer 1, is further provided on the outside of thecell array that comprises of a plurality of memory cell transistors.

An equivalent circuit of the non-volatile semiconductor memory accordingto the embodiment shown in FIGS. 1 to 3 is shown in FIG. 4. As shown inFIG. 4, a cell array 100 comprises memory cell transistors MT₁₁ toMT_(1n), MT₂₁ to MT_(2n), . . . , MT_(m1) to MT_(mn). In cell array 100,the memory cell transistors MT₁₁ to MT_(1n), and the select gatetransistors STS₁ and STD₁ are connected in series, thereby comprising acell unit (linear arrangement) 111. The select gate transistors STS₂ toSTS_(m), the memory cell transistors MT₂₁ to MT_(2n), . . . , MT_(m1) toMT_(mn), and the select gate transistors STD₂ to STD_(m) are connectedin series, thereby comprising cell units (linear arrangements) 112, . .. , 11 m. The cell units 111, 112, . . . , 11 m are respectivelyarranged in turn in the row direction, thereby forming a matrix.

The drain region 421 of the enhancement mode select gate transistor STS₁is connected to the source region 421 of the memory cell transistor MT₁₁positioned at one end of the linear arrangement in which the group ofmemory cell transistors MT₁₁ to MT_(1n) are connected in series. Theselect gate transistor STS₁ selects the memory cell transistors MT₁₁ toMT_(1n). On the other hand, the source region 42(n+1) of the enhancementmode select gate transistor STD₁ is connected to the drain region42(n+1) of the memory cell transistor MT_(1n) positioned at the otherend of the linear arrangement in which the group of memory celltransistors MT₁₁ to MT_(1n) are connected in series. The select gatetransistor STD₁ selects the memory cell transistors MT₁₁ to MT_(1n).Components of the cell units 112, . . . , 11 m are the same as the cellunit 111.

The source regions of the respective select gate transistors STS₁ toSTS_(m) are connected with a source line SL common to the sourceregions. A source line driver 103, which supplies voltage to the sourceline SL, is connected to the source line SL. The following elements areconnected to a row decoder 101: a select gate line SGS common to theselect gate transistors STS₁ to STS_(m); a select gate line SGD commonto the select gate transistors STD₁ to STD_(m); a word line WL₁ commonto the memory cell transistors MT₁₁, MT₂₁, . . . , MT_(m1); a word lineWL₂ common the memory cell transistors MT₁₂, MT₂₂, . . . , MT_(m2); . .. ; and a word line WL_(n) common to the memory cell transistorsMT_(1n), MT_(2n), . . . , MT_(mn). The row decoder 101 obtains a rowaddress decoded signal by decoding a row address signal, and suppliesoperation voltage to the word lines WL₁ to WL_(m) and the select gatelines SGS and SGD, in a selective manner. Each of the bit lines BL₁ toBL_(m) is connected to the drain region of each of the select gatetransistors STD₁ to STD_(m). A sense amplifier 102 and a column decoder104 are connected to the bit lines BL₁ to BL_(m). The column decoder 104obtains a column address decoded signal by decoding a column addresssignal, and selects one out of the bit lines BL₁ to BL_(m) based on thecolumn address decoded signal. The sense amplifier 102 amplifies memorysignals, which have been read from a memory cell transistor selected bythe row decoder 101 and the column decoder 104.

Next, a description will be provided for operations of writing, erasingand reading performed by the non-volatile semiconductor memory accordingto the embodiment of the present invention. In an initial state (datais 1) where the memory cell transistor MT₁₁ shown in FIG. 1 has notaccumulated electrons in its floating gate electrode 13, a thresholdvoltage of the memory cell transistor MT₁₁ is a negative thresholdvoltage V_(e) as shown in FIG. 5, since the memory cell transistor MT₁₁is a depletion mode memory cell transistor.

To begin with, a description will be provided for an example of awriting operation with reference to FIGS. 6 and 7. Hereinafter, it isassumed that the memory cell transistor MT₁₁ is selected during itswriting and reading operations. The memory cell transistor MT₁₁ whichhas been selected is referred to as a “selected memory cell transistor,”and the memory cell transistors MT₁₂ to MT_(1n), MT₂₁ to MT_(2n), . . ., and MT_(m1) to MT_(mn) which have not been selected are referred to as“non-selected memory cell transistors.” The bit line BL₁ and the wordline WL_(n) connected to the selected memory cell transistor MT₁₁ arereferred to as a “selected bit line” and a “selected word line”respectively. The bit lines BL₂ to BL_(m) and the word lines WL₂ toWL_(n) connected only to the non-selected memory cell transistors MT₂₁to MT_(2n), . . . , MT_(m1) to MT_(mn) and MT_(mn) are referred to as“non-selected bit lines” and “non-selected word lines.”

A voltage of 0 V and a power supply voltage V_(cc) (for example, 3 V)are applied to the selected bit line BL₁ and the source line SL,respectively. A voltage of 0 V is applied to the select gate line SGS,thus causing the select gate transistor STS₁ to be in the “off” state,thus causing the source line SL to be in the “cut-off” state. The powersupply voltage V_(cc) (for example, 3 V) is applied to the select gateline SGD, and the select gate transistor STD₁ is caused to be in the“on” state, accordingly causing 0 V in the selected bit line BL₁ to betransmitted to the selected memory cell transistor MT_(1n).

A write voltage V_(pgm) (for example, 20 V) is applied to the selectedword line WL₁. An intermediate potential V_(pass) (for example, 10 V) isapplied to each of the non-selected word lines WL₂ to WL_(m). Theselected memory cell transistor MT₁₁ and the non-selected memory celltransistors MT₁₂ to MT_(1n) are all caused to be in the “on” state, thuscausing 0 V in the selected bit line BL₁ to be transmitted.

In the selected memory cell transistor MT₁₁, the write voltage V_(pgm)(for example, 20 V) is applied to the control gate electrode 15 shown inFIG. 1, and a strong electric field is applied between the channelregion 411 underneath the floating gate electrode 13 to which 0 V istransmitted from the selected bit line BL₁ and the floating gateelectrode 13, thus injecting electrons into the floating gate electrode13 through the gate insulating film 12. Once electrons have beenaccumulated in floating gate electrode 13, a threshold voltage of theselected memory cell transistor MT₁₁ increases by ΔV from the negativethreshold voltage Ve to a positive threshold voltage Vp, as shown inFIG. 5. Accordingly, the selected memory cell transistor MT₁₁ is in the“write” state (data is 0).

For example, the power supply voltage V_(cc) (for instance, 3 V) isapplied to each of the non-selected bit lines BL₂ to BL_(m). A voltageof 0 V is applied to the select gate line SGS, and thus each of theselect gate transistors STS₂ to STS_(m) is in the “off” state,accordingly causing the source line SL to be in the “cut-off” state. Thepower supply voltage V_(cc) (for example, 3V) is applied to the selectgate line SGD, thus causing each of the selected gate transistors STD₂to STD_(m) to be in the “on” state. Accordingly, voltages (for example,3 V−V_(th) [V]), which are obtained by subtracting the threshold voltageV_(th) in the select gate transistors STD₂ to STD_(m) from the powersupply voltages V_(cc) in the non-selected bit lines BL₂ to BL_(m)respectively, to be transmitted to the non-selected memory celltransistors MT₂₁ to MT_(2n), . . . , MT_(m1) to MT_(mn). Since theselect gate line SGS is in the “cut-off” state, electric potentialdifferences between each of the select gate transistors STD₂ to STD_(m)and each of the source regions of the respective non-selected memorycell transistors, to which the aforementioned voltages are transmitted,are caused to be V_(cc)−(V_(cc)−-V_(th))=V_(th) [V]. Consequently, theselect gate transistors STD₂ to STD_(m) are also in the “cut-off” state.

When the select gate transistors STD₂ to STD_(m) and the select gatetransistors STS₂ to STS_(m) are cut off, the channel regions underneaththe respective non-selected memory cell transistors MT₂₁ to MT_(2n), . .. , MT_(m1) to MT_(mn) are in the “on” state, and the channel regionsfrom the source line SL and the bit lines BL₂ to BL_(m) are in the“floating” state. Potentials of channel regions which have been in the“floating” state are increased (larger than, or equal to, V_(cc) andsmaller than, or equal to, V_(pass), for example, 7 to 8 V) by thecoupling of the potentials V_(pgm) and V_(pass).

Since channel potentials of the non-selected memory cell transistorsMT₂₁ to MT_(2n), . . . , MT_(m1) to MT_(mn) are increased, even if thewrite voltage V_(pgm) (for example, 20 V) is applied to control gateelectrodes 15 of the non-selected memory cell transistors MT₂₁ toMT_(2n), . . . , MT_(m1) to MT_(mn), differences in potential betweeneach of the non-selected memory cell transistors MT₂₁ to MT_(m1) andeach of the corresponding floating gate electrodes 13 are small.Accordingly, electrons are not injected into the floating gateelectrodes 13.

Next, a description will be provided for an example of the erasingoperation with reference to FIGS. 6 and 8. In the NAND flash EEPROM,data can be erased simultaneously from all the memory cell transistorsin a selected block. Here, a description will be provided for an exampleof a simultaneous erasure of all the written data from the memory celltransistors MT₁₁ to MT_(1n), MT₂₁ to MT_(2n), . . . , MT_(m1) to MT_(mn)in the cell array 100.

An erase voltage V_(era) (for example, 20 V) is applied to all the bitlines BL₁ to BL_(m) and the source line SL, respectively. An initialvoltage V_(sgd) (for example, 4 V) is applied to the select gate lineSGD, so that the select gate transistor STD₁ is in the “on” state.Accordingly, the erase voltage Vera (for example, 20 V) in the bit lineBL₁ to BL_(m) is transmitted to the memory cell transistors MT_(1n),MT_(2n), . . . , MT_(mn). An initial voltage V_(sgs) (for example, 4 V)is applied to the select gate line SGS, so that the select gatetransistor STS₁ is in an “on” state. Accordingly, the erase voltageV_(era) (for example, 20 V) in the source line SL is transmitted to thememory cell transistors MT₁₁, MT₂₁, . . . , MT_(m1).

A voltage of 0 V is applied to all the word lines WL₁ to WL_(n). Sincethe memory cell transistors MT₁₁ to MT_(1n), MT₂₁ to MT_(2n), . . . ,MT_(m1) to MT_(mn) are depletion mode and normally-on transistors, thememory cell transistors MT₁₁ to MT_(1n), MT₂₁ to MT_(2n), . . . ,MT_(m1) to MT_(mn) are in the “on” state if 0 V is applied to thecontrol gate electrodes 15. When the erase voltage V_(era) (for example,20 V) is applied to the third semiconductor layer 3, electrons areemitted from the floating gate electrodes 13 to the channel regionsthrough the gate insulating film 12. Once the electrons are emitted fromthe floating gate electrodes 13, the threshold voltage of the selectedmemory cell transistor MT₁₁ is decreased by ΔV from a positive thresholdvoltage V_(p) to a negative threshold voltage V_(e), as shown in FIG. 5.Thus, the selected memory cell transistor MT₁₁ will be in the “erase”state (date is 1). Consequently, data are erased simultaneously from thememory cell transistors MT₁₁ to MT_(1n), MT₂₁ to MT_(2n), . . . ,MT_(m1) to MT_(mn).

Next, a description will be provided for an example of a readingoperation with reference to FIGS. 6 and 9. A pre-charged voltage V_(b1)(for example, 1 V) is applied to each of the bit lines BL₁ to BL_(m),and 0 V is applied to the source line SL. The power supply voltageV_(cc) (for example, 3 V) is applied to the select gate line SGS, sothat the select gate transistor STS₁ is in the “on” state. Accordingly,0 V in the source line SL is transmitted to the memory cell transistorsMT₁₁ MT₂₁, . . . , MT_(m1). The power supply voltage V_(cc) (forexample, 3 V) is applied to the select gate line SGD, so that the selectgate transistor STD₁ is in the “on” state. Accordingly, the pre-chargedvoltage V_(b1) (for example, 1 V) in the bit lines BL₁ to BL_(m) istransmitted to the memory cell transistors MT_(1n), MT_(2n), . . . ,MT_(mn).

A voltage V_(read) (for example, 4.5 V), which is higher than the powersupply voltage V_(cc), is applied to the non-selected word lines WL₂ toWL_(m), so that the non-selected memory cell transistors MT₁₂ toMT_(1n), MT₂₂ to MT_(2n), MT_(m2) to MT_(mn) are in the “on” state.Accordingly, the non-selected memory cell transistors MT₁₂ to MT_(1n),MT₂₂ to MT_(2n), MT_(m2) to MT_(mn) serve as transfer transistors. Avoltage of 0 V is applied to the selected word line WL₁. In the memorycell transistor MT₁₁, 0 V is applied to the control gate electrode 15 asshown in FIGS. 10 and 11. In a case where electrons have not beenaccumulated in the floating gate electrode 13 as shown in FIG. 10, thethreshold voltage V_(e) of the selected memory cell transistor MT₁₁ isless than 0 V as shown in FIG. 5. For this reason, even if the voltageapplied to the control gate electrode 15 is 0 V, the selected memorycell transistor MT₁₁ is in the “on” state, and accordingly channelcurrent flows.

On the other hand, when electrons have accumulated in the floating gateelectrode 13 as shown in FIG. 11, the threshold voltage V_(p) of theselected memory cell transistor MT₁₁ is higher than 0 V, as shown inFIG. 5. A depletion layer A of the channel region 411 underneath thefloating gate electrode 13 increases, as shown in FIG. 11. Accordingly,the memory cell transistor MT₁₁ is in the “off” state. Thus, the channelcurrent does not flow. If the channel current flows into the selectedmemory cell transistor MT₁₁, it is determined that the selected memorycell transistor MT₁₁ is in the “erase” state (data is “1”). If thechannel current does not flow into the selected memory cell transistorMT₁₁, it is determined that the selected memory cell transistor MT₁₁ isin the “write” state (data is “0”).

Note that, the enhancement mode and normally-off memory cell transistorsMT₁₁ to MT_(1n) having n-type channel regions, which are completelydepleted at thermal equilibrium state, can be operated similar todepletion mode memory cell transistors, since these transistors turn onby forming accumulation layers of electric charge when a bias voltage isapplied.

FIG. 38 shows enhancement and inversion channel mode memory celltransistors MT₁₁₁ to MT_(11n) as a comparative example. Each of thememory cell transistors MT₁₁₁ to MT_(11n) includes n⁺-type source anddrain regions 110 which are provided on upper parts of a p-typesemiconductor substrate 111, and a floating gate electrode 113 and acontrol gate electrode 115, which are provided above a channel regionbetween the source and drain regions 110. As each of the memory celltransistors MT₁₁₁ to MT_(11n) as the enhancement and inversion channelmode transistor has been minaturized, the width W_(c) of the channelregion between the source and drain regions 110 has become so narrowthat the influence of the short channel effect has increased. On theother hand, since the memory cell transistors MT₁₁ to MT_(1n), shown inFIG. 1, includes the source and drain regions 421 to 42(n+1) and thechannel regions 411 to 41 n, which are of same conductivity type, it ispossible to decrease an influence of the short channel effect.

Furthermore, as the consentration of memory cells in the non-volatilesemiconductor memory has been increased, when high bias is applied to acell in writing operations, an electrical field, which is applied to thechannel regions increase, and breakdown occurs in some cases. Bycontrast, according to the embodiment of the present invention, thesecond semiconductor layer 2, which has a lower concentration ofimpurities than that of the first semiconductor layer 1, is interposedbetween the third semiconductor layer 3, which includes the source anddrain regions 421 to 42(n+1) and the channel regions 411 to 41 n, andthe first semiconductor layer (semiconductor substrate) 1. Thereby, itis possible to improve breakdown voltage by mitigating an electricalfield in a junction part of the first, second and third semiconductorlayers 1, 2 and 3, even if a reverse bias is applied.

In addition, in a case where electrons have accumulated in the floatinggate electrode 13 of the selected memory cell transistor MT₁₁, as shownin FIG. 11, when 0 V is applied to the control gate electrode 15 duringa reading operation, the channel region 411 is depleted. Thus, theselected memory cell transistor MT₁₁ is fully in the “off” state.

In the NAND flash EEPROM including the source and drain regions 421 to42(n+1) and the channel regions 411 to 41 n, each having the sameconductivity types, the same as a general NAND flach EEPROM includingthe channel regions having a conductivity type different from that ofthe source and drain regions, it is possible to operate the flach EEPROMby applying voltages having the same polarization in writing operation,erasing operation or reading operation, as shown in FIG. 5.

A voltage of the same polarity is applied during operations of writing,erasing and reading as shown in FIG. 5. Thereby, the writing, erasingand reading operations can be performed in common with a NAND flashEEPROM in which the SOI technology has not been adopted. Consequently,timing adjustment is easier, and the area of the peripheral circuitportion can be decreased, in comparison with a case where operationvoltages of two polarities, positive and negative, are applied.

Moreover, it is easy to cut off the source line SL and the bit line BL₁,since the select gate transistors STS₁ and STD₁, shown in FIG. 1,connected in series in the column direction with the memory celltransistors MT₁₁ to MT_(1n) are enhancement transistors.

In addition, the memory cell transistors MT₁₁₁ and MT₁₂₁ of thecomparative case are isolated from one another in the row direction byelement isolation regions (STI) 106, respectively, as shown in FIG. 39,and a parasitic capacitance C_(sti) is generated between the elementisolation regions (STI) 106. On the other hand, the memory celltransistors MT₁₁ and MT₂₁ in the row direction are completely isolatedfrom each other by the element isolation insulating film 6 as shown inFIG. 3. Consequently, parasitic capacitance C_(sti) influence betweenthe element isolation regions (STI) 106, shown in FIG. 39, can bedecreased. Accordingly, punch-through immunity, field inversionbreakdown voltage and the like do not have to be considered. For thisreason, the widths W_(s) of the respective element isolation insulatingfilms 6 in the row direction shown in FIG. 3 can be set at a minimumwidth for allowing lithographic and etching techniques.

The peripheral circuits (MOS transistors), which are not illustrated,for driving the memory cell transistors MT₁₁ to MT_(1n), MT₂₁ toMT_(2n), . . . , MT_(m1) to MT_(mn) can also be formed on the secondsemiconductor layer 2 provided in the first semiconductor layer 1. Withregard to an n channel MOS transistor used for a CMOS circuit, p-typeimpurity diffusion layers may be used, in common with the select gatetransistor. With regard to a p channel MOS transistor used for the CMOScircuit, n-type impurity diffusion layers may be used.

Next, a description will be provided for an example of a method formanufacturing the non-volatile semiconductor memory according to thepresent embodiment. Here, FIGS. 12A, 13A, . . . , and 26A show across-sectional process flow of the cell array, shown in FIG. 2, in thecolumn direction taken along the I-I line. In addition, FIGS. 12B, 13B,. . . , and 26B show a cross-sectional process flow of the cell array,in the row direction, taken along the II-II line.

Note that the method for manufacturing the non-volatile semiconductormemory shown in FIG. 12A to FIG. 26B is an example. It is possible toprovide the non-volatile semiconductor memory by other various methods.

As shown in FIGS. 12A and 12B, a first semiconductor layer(semiconductor substrate) 1 having p-type conductivity is provided. Asecond semiconductor layer 2 is formed by growing an epitaxial layer,which has p-type conductivity with an impurity concentration lower thanthe p-type impurity consentration of the first semiconductor layer 1, onthe first semiconductor layer 1. The second semiconductor layer 2 mayalso be formed by the epitaxial layer with ion implantation of p-typeimpurities like boron (¹¹B⁺) and subsequent thermal processing, aftergrowing a non-doped epitaxial layer on the first semiconductor layer 1.

Then, a third semiconductor layer 3 is formed by growing an epitaxiallayer having n-type conductivity on the second semiconductor layer 2.Perhaps, after growing an epitaxial layer on the second semiconductorlayer 2 without doping, n-type impurity ions, such as phosphorous(³¹P⁺), arsenic (⁷⁵As⁺) or the like, may be implanted to the epitaxiallayer and subjected to a subsequent thermal treatment. Note that, aftergrowing the n-type epitaxial layer on the first semiconductor layer 1,the second semiconductor layer 2 and the third semiconductor layer 3 maybe formed by ion implantation of p-type impurities to a lower part ofthe n-type epitaxial layer and then performing a thermal process.

A resist film is coated on the third semiconductor layer 3. The resistfilm is patterned by a lithographic technique. As shown in FIGS. 13A and13B, ions having a p-type impurity, such as ¹¹B⁺, are implanted with thepatterned resist film 20 used as a mask. Residual resist film 20 isremoved by use of a resist remover or the like. When deemed necessary, aresist film is also coated on the region surrounding the cell array,where the peripheral circuit is to be formed, and the coated resist filmis patterned. Then, if necessary, ions are implanted.

Then, as shown in FIGS. 14A and 14B, impurity ions implanted in thethird semiconductor layer 3 are activated by thermal treatment. As aresult, p⁻ type impurity diffusion layers 40 a and 40 b are formed inregions which will form select gated transistors.

Next, as shown in FIGS. 15A and 15B, a gate insulating film (tunneloxidation film) 12, such as a SiO₂ film, is formed by a thermaloxidation method so that the thickness of the gate insulating film isapproximately 1 nm to 15 nm. A P-doped first polysilicon layer (firstconductive layer) 13, which will be a floating gate electrode, isdeposited on the gate insulating film 12 by reduced pressurized CVD(RPCVD) so that the thickness of the first polysilicon layer may beabout 10 nm to about 200 nm. Subsequently, a mask material 5, such as aSi₃N₄ film, is deposited on the first polysilicon layer 13 by CVD sothat the thickness of the mask material may be approximately 50 nm to200 nm.

A resist film is spin-coated on the mask material 5, and an etching maskof the resist film is formed by a lithographic technique. Parts of themask material 5 are removed in a selective manner by reactive ionetching (RIE) in which an etching mask is used. After etching, theresist film is removed. With the mask material 5 used as an etchingmask, parts of the first polysilicon layer 13, the gate insulating film12, the third semiconductor layer 3 and the second semiconductor layer 2are removed in the column direction in a selective manner. As a result,groove portions 7 are formed, which penetrate through the firstpolysilicon layer 13, the gate insulating film 12, the thirdsemiconductor layer 3 and the second semiconductor layer 2, as shown inFIGS. 16A and 16B. Although FIG. 16B shows that parts of the firstsemiconductor layer 1 are removed, the surface of the firstsemiconductor layer 1 may retain planar. Furthermore, the grooveportions 7 may not penetrate the second semiconductor layer 2, thesecond semiconductor layer 2 may retain on the first semiconductor layer1 in a depth direction, and the surface of the second semiconductorlayer 2 may retain planar.

As shown in FIGS. 17A and 17B, an element isolation insulating film 6 isburied in the groove portions 7 by CVD or the like so that the thicknessof the element isolation insulating film 6 is approximately 200 nm to1,500 nm. As shown in FIGS. 18A and 18B, the element isolationinsulating film 6 is etched back by use of chemical-mechanical polishing(CMP) so that the element isolation insulating film 6 may be planarized.The upper surfaces of the element isolation insulating films 6 aresituated in positions higher than the upper surfaces of the gateinsulating films 12. As a result, the elements of the memory celltransistors MT₁₁ to MT₂₁ in the row direction are completely isolatedfrom one another. Note that after removing the mask 5, shown FIGS. 16Aand 16B, as shown in FIGS. 17A and 17B, the element isolation insulatingfilm 6 is deposited, and the element isolation insulating film 6 may beplanelized by CMP, as shown in FIGS. 18A and 18B.

As shown in FIGS. 19A and 19B, an inter-electrode insulating film 14 isdeposited on the tops of the first polysilicon layers 13 and the tops ofthe element isolation insulating films 6 by CVD or the like. A resistfilm 23 is coated on the inter-electrode insulating film 14, and theresist film 23 is patterned by a lithographic technique. As shown inFIGS. 20A and 20B, opening portions 8 are formed in a part of theinter-electrode insulating film 14 by RIE or the like with the patternedresist film 23 used as a mask. As shown in FIGS. 21A and 21B, a P-dopedsecond polysilicon layer (second conductive layer) 15, which will be acontrol gate electrode, is deposited on the inter-electrode insulatingfilm 14 by CVD so that the thickness of the second polysilicon layer 15is approximately 10 nm to 200 nm.

A resist film 24 is coated on the second polysilicon layer 15, and theresist film 24 is patterned by a lithographic technique. As shown inFIGS. 22A and 22B, parts of the second polysilicon layer 15, theinter-electrode insulating layer 14, and the first polysilicon layer 13are removed in the row direction, with the patterned resist film 24 usedas a mask, by RIE in a selective manner until the gate insulating film12 underneath the parts is exposed. As a result, grooves are formed andpenetrate through the second polysilicon layer 15, the inter-electrodeinsulating film 14 and the first polysilicon layer 13. Patterns areformed having stacked structures of a control gate electrode 15, aninter-electrode insulating film 14 under the control gate electrode 15,a floating gate electrode 13 under inter-electrode insulating film 14and a gate insulating film 12 under the floating gate electrode 13. Theselect gate electrodes 13 a, 15 a, 13 b and 15 b are formed in regionsfor forming select gate transistors. The resist film 24 is removed by aresist remover and the like.

Ions of ³¹P⁺ or ⁷⁵As⁺ are implanted through the gate insulating films 12in a self-aligned manner with the second polysilicon layer 15 used as amask. Subsequently, n-type impurity ions of the first polysilicon layers13 and the second polysilicon layers 15 are activated by thermaltreatment. Thereby, the floating gate electrodes 13 and the control gateelectrodes 15 are formed. As shown in FIGS. 24A and 24B, p-type impurityions and n-type impurity ions in the third semiconductor layer 3 areactivated. Accordingly, n⁺-type impurity diffusion layers (source anddrain regions) 421 to 42(n+1) are formed in the third semiconductorlayer 3 and positioned at the bottom of grooves as shown in FIG. 1, andan n⁻-type channel region 411 to 41(n+1) is formed in the thirdsemiconductor layer 3 underneath the floating gate electrodes 13.Consequently, the depletion mode or enhancement mode memory celltransistor MT₁₁ to MT_(1n) is formed. Consequently, the memory celltransistors, illustration omitted, cross in the column direction and inthe row direction and the memory cell transistors are formed in amatrix.

Simultaneously, a p⁻-type impurity diffusion layer (channel region) 42is formed in the third semiconductor layer 3, and an n⁺-type impuritydiffusion layer (source region) 43 is formed. Thereby, an enhancementmode select gate transistor STS₁ is formed. Also, the n⁺-type impuritydiffusion layer (drain region) 45 and the p⁻-type impurity diffusionlayer (channel region) 44 between the drain region 45 and the sourceregion 42(n+1) are formed. Thereby, the enhancement mode select gatetransistor STD₁ is also formed.

Subsequently, as shown in FIGS. 25A and 25B, an interlayer insulatingfilm 27 is deposited by CVD or the like and a resist film 28 is coatedon the interlayer insulating film 27. Thereafter, the resist film 28 ispatterned by lithography technology. As shown in FIGS. 26A and 26B,openings (contact holes) 29 a and 29 b are formed by RIE and the likeusing the patterned resist film 28 as a mask. The openings 29 a and 29 bpenetrate the interlayer insulating film 27 and respectively extend tothe source region 43 or the drain region 45. Thereafter, a metal film isburied in each of the openings 29 a and 29 b by CVD or the like to formthe source line contact plug 18 and the bit line contact plug 17 so thatthe source line contact plug 18 and the bit line contact plug 17 arerespectively connected to the source region 43 and the drain region 45.Finally, predetermined interconnects and insulating films are formed anddeposited.

In accordance with the method for manufacturing the semiconductorstorage device according to the embodiment shown in FIGS. 12A to 26B,the non-volatile semiconductor memory shown in FIG. 1 can be provided.Since the element isolation region (STI) 6 as shown in FIG. 1 does nothave to be buried, a minaturized process can be performed with ease.

As shown in the comparative example of FIG. 40, for example, in the caseof forming the n-type third semiconductor layer 3 on the p-type firstsemiconductor layer (semiconductor substrate) 1 without providing thesecond semiconductor layer 2, to thereby form the non-volatilesemiconductor memory, the p-type impurities in the first semiconductorlayer (semiconductor substrate) 1 are diffused into the n-type thirdsemiconductor layer 3 by a heating step in the process, sometimescausing deterioration of the transistor characteristics.

The diffusion of the impurities is determined by a product of adiffusion coefficient D and a concentration gradient ΔN. According tothe embodiments of the present invention, N_(sub)>N is established andN_(sub)−N_(o)>N−N_(o) is established where N_(sub) is the p-typeimpurity concentration in the first semiconductor layer (semiconductorsubstrate) 1, N is the p-type impurity concentration of the p-typesecond semiconductor layer 2, and N_(o) is the p-type impurityconcentration in the third semiconductor layer 3. Hence, as comparedwith the concentration gradients of the p-type impurities of the thirdsemiconductor layer 3 and the first semiconductor layer (semiconductorsubstrate) 1 in the case where the second semiconductor layer 2 is notpresent, which is shown in FIG. 40, gradually changing concentrationgradients of the p-type impurities in the third semiconductor layer 3and the second semiconductor layer 2 can be achieved by providing thesecond semiconductor layer 2. Therefore, the second semiconductor layer2 can suppress the upward diffusion of the p-type impurities from thefirst semiconductor layer 1 to the third semiconductor layer 3 in theheating step of the process. Therefore, it is possible to suppressdeterioration of the transistor characteristics.

(First Modification)

In a non-volatile semiconductor memory according to a firstmodification, as shown in FIG. 27, the source regions and drain regions421 to 42 (n+1) may be n⁻-type with an impurity concentrationsubstantially equivalent to that of the n⁻-type channel regions 411 to41 n of the memory cell transistors MT₁₁ to MT_(1n). Also in this case,in a similar way to the embodiments of the present invention, the memorycell transistors MT₁₁ to MT_(1n) are of the depletion type or theenhancement type, which have the source and drain regions 421 to 42(n+1)and the channel regions 411 to 41 n of the same conductivity type.Accordingly, the influence of the short channel effect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the first modification, the ionimplantation process of FIGS. 23A and 23B and the thermal treatmentprocess of FIGS. 24A and 24B is omitted. Therefore, the process can besimplified as compared with the non-volatile semiconductor memory shownin FIG. 1, and this modification is suitable also for miniaturization ofthe non-volatile semiconductor memory. Since other steps in theprocedure are substantially the same as those in FIGS. 13A and 26B, aredundant description thereof will be omitted.

(Second Modification)

In a non-volatile semiconductor memory according to a secondmodification, the second semiconductor layer 2 shown in FIG. 1 is asemi-insulating semiconductor layer (intrinsic semiconductor layer), inwhich the impurity concentration may be lower than that of the firstsemiconductor layer (semiconductor substrate) 1 and the thirdsemiconductor layer 3.

The second semiconductor layer 2 formed by the semi-insulatingsemiconductor is interposed between the third semiconductor layer 3 andthe first semiconductor layer (semiconductor substrate) 1. Thus, even ifa reverse bias is applied, the electric field of the junction portion isabsorbed. Therefore, it is possible to improve the breakdown voltage.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the second modification, in theprocedure shown in FIGS. 12A and 12B, the semi-insulating semiconductorlayer (second semiconductor layer) 2 is epitaxially grown on the p-typefirst semiconductor layer (semiconductor substrate) 1. Thereafter, then-type epitaxial layer (third semiconductor layer) 3 in which theimpurity concentration is higher than that of the second semiconductorlayer 2 is grown on the second semiconductor layer 2. Since other stepsin the procedure are substantially the same as those in FIGS. 13A and26B, a redundant description thereof will be omitted.

In the heating step in the process, the p-type impurities are diffusedfrom the first semiconductor layer (semiconductor substrate) 1 throughthe second semiconductor layer 2 to the third semiconductor layer 3, andthe amount of diffused p-type impurities is decreased in accordance withthe thickness of the second semiconductor layer 2. Therefore, thediffusion of the p-type impurities into the third semiconductor layer 3is suppressed. Simultaneously, the n-type impurities are diffused fromthe third semiconductor layer 3 into the second semiconductor layer 2,and the pn junction is newly formed in the second semiconductor layer 2.Hence, the deterioration of the transistor characteristics can besuppressed.

(Third Modification)

A non-volatile semiconductor memory according to a third modification ischaracterized in that the second semiconductor layer 2, shown in FIG. 1,contains either carbon (C) atoms or oxygen (O) atoms, or both C and Oatoms.

Sheet resistance of the second semiconductor layer 2 increases by theimpurities implanted thereto. Therefore, even if a reverse bias isapplied to the second semiconductor layer 2, the leak current can besuppressed.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the third modification, in theprocedure shown in FIGS. 12A and 12B, at least either the C and O atomsare ion-implanted in the vicinity of the surface of the p-type firstsemiconductor layer (semiconductor substrate) 1, followed by the thermaltreatment thereof, and the second semiconductor layer 2 containing atleast either the C atoms and the O atoms is thus formed. Thereafter, then-type epitaxial layer (third semiconductor layer) 3 is grown on thesecond semiconductor layer 2. Since other steps in the procedure aresubstantially the same as those in FIGS. 13A and 26B, a redundantdescription thereof will be omitted.

The second semiconductor layer 2 into which the C atoms and the O atomsare implanted is interposed between the third semiconductor layer 3 andthe first semiconductor layer (semiconductor substrate) 1, and thesecond semiconductor layer 2 thus getters (catches) B as the p-typeimpurities from the first semiconductor layer 1. Accordingly, thediffusion of the impurities into the third semiconductor layer 3 can besuppressed. Therefore, it is possible to suppress the deterioration ofthe transistor characteristics.

(Fourth Modification)

In a non-volatile semiconductor memory according to a fourthmodification, a description will be made of an example where the secondsemiconductor memory 2 is of the first conductivity type (p-type) inwhich the impurity concentration is lower than that of the firstsemiconductor layer (semiconductor substrate) 1, and contains p-typeimpurities having a larger atomic weight than the p-type impuritiescontained in the first semiconductor layer (semiconductor substrate) 1.For example, if the p-type impurities contained in the firstsemiconductor layer (semiconductor substrate) 1 are B, then aluminum(Al), gallium (Ga), indium (In), thallium (Tl), or the like is usable asthe p-type impurities having a larger atomic weight than that of B.

The second semiconductor layer 2 with a low impurity concentration isinterposed between the third semiconductor layer 3 and the firstsemiconductor layer (semiconductor substrate) 1. Thus, even if a reversebias is applied, the electric field of the junction portion is absorbed.Therefore, it is possible to improve the breakdown voltage.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to a method for manufacturing the non-volatile semiconductormemory according to the fourth modification, in the procedure shown inFIGS. 12A and 12B, a p-type or n-type epitaxial layer is formed on thep-type first semiconductor layer (semiconductor substrate) 1.Subsequently, the p-type impurities having a larger atomic weight thanthat of the p-type impurities contained in the first semiconductor layer(semiconductor substrate) 1 are ion-implanted into the epitaxial layer.Thereafter, the n-type epitaxial layer is grown. Since other steps inthe procedure are substantially the same as those in FIGS. 13A and 26B,a redundant description thereof will be omitted.

The diffusion of the impurities is determined by the product of thediffusion coefficient D and the concentration gradient ΔN. In general,atoms having a larger atomic weight have an atomic radius larger thanthat of atoms having a atomic weight. In the atoms having a largeratomic weight, the diffusion of the impurities among lattices issuppressed. This means that the diffusion coefficient D is decreased.Hence, the diffusion of the impurities from the first semiconductorlayer 1 to the third semiconductor layer 3 can be suppressed by thesecond semiconductor layer 2. Therefore, it is possible to suppress thedeterioration of the transistor characteristics.

(Fifth Modification)

In a non-volatile semiconductor memory according to a fifthmodification, the second semiconductor layer 2 contains firstconductivity type (p-type) or second conductivity type (n-type) siliconcarbide (SiC).

A SiC layer having a high dielectric breakdown electric field isinterposed between the third semiconductor layer 3 and the firstsemiconductor layer (semiconductor substrate) 1. Thus, even if a reversebias is applied, breakdown resistance of the junction portion isincreased. Therefore, it is possible to improve the breakdown voltage.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example a method for manufacturing the non-volatilesemiconductor memory according to the fifth modification, in theprocedure shown in FIGS. 12A and 12B, the second semiconductor layer 2,as the p-type or n-type 3C-SiC epitaxial layer, is formed on the firstsemiconductor layer (semiconductor substrate) 1. Thereafter, the thirdsemiconductor layer 3, as the n-type epitaxial layer (Si layer), isgrown on the second semiconductor layer 2. Since other steps in theprocedure are substantially the same as those in FIGS. 13A and 26B, aredundant description thereof will be omitted.

With regard to the diffusion of the impurities, there are two routes forthe diffusion: (1) where the impurities are diffused among the lattices,and (2) where the impurities move through lattice points. When the firstsemiconductor layer (semiconductor substrate) 1 is an Si substrate,3C-SiC can be epitaxially grown from the surface of Si, and Si can beepitaxially grown again from the surface of 3C-SiC. Here, 3C representsthe SiC as having a tricyclic cubic structure. 3C-SiC has a crystallinestructure of a zinc blend type, in which gaps among the lattices arenarrower as compared with Si single crystals with a diamond structure.Therefore, it is more difficult for the impurities to diffuse among thelattices of 3C-SiC as compared with the Si single crystals, and thediffusion of the p-type impurities from the first semiconductor layer(semiconductor substrate) 1 into the third semiconductor layer 3 can besuppressed.

When the impurities move through the lattice points, for example, when Bmoves through the lattice points of Si, a process is repeated, in whichB is first replaced for the Si lattice points, Si—B bonding issubsequently cut, B retains among the lattices, and B extrudes and issubstituted for the Si atoms next thereto. However, in the case where Bis going to move through the lattice points of 3C-SiC, when B replacesthe Si lattice points, C and B are bonded together since C is present onthe peripheries of the Si lattice points. Since this C—B bonding isstronger than the Si—B bonding, the C—B bonding is not cut easily, andmovement of B is suppressed. Moreover, when B replaces the C latticepoints, B cuts the Si—B bonding, and begins to move through the latticepoints. However, at the time when B is substituted for the latticepoints of Si, B is bonded to C, and the movement thereof is suppressed.Hence, the diffusion of the p-type impurities from the firstsemiconductor layer (semiconductor substrate) 1 to the thirdsemiconductor layer 3 can be suppressed.

Note that an n-type 3C-SiC epitaxial layer may be formed as the thirdsemiconductor layer (SiC layer) 3 on the second semiconductor layer 2.The diffusion of the impurities into the SiC layer is less than thediffusion thereof into Si. Hence, the diffusion of the impurities fromthe second semiconductor layer into the third semiconductor layer 3 canbe prevented.

(Sixth Modification)

In a non-volatile semiconductor memory according to a sixthmodification, the second semiconductor layer 2 shown in FIG. 1 containsp-type or n-type SiGe, in which an impurity concentration of SiGe islower than the impurity concentration of the first semiconductor layer(semiconductor substrate) 1.

The low impurity concentration SiGe layer is interposed between thethird semiconductor layer 3 and the first semiconductor layer(semiconductor substrate) 1. Thus, the sheet resistance of the secondsemiconductor layer 2 increases, and even if a reverse bias is applied,the leak current can be suppressed.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the sixth modification, in theprocedure shown in FIGS. 12A and 12B, the second semiconductor layer 2,as the p-type or n-type SiGe epitaxial layer, is formed on the p-typefirst semiconductor layer (semiconductor substrate) 1. Thereafter, then-type Si epitaxial layer (third semiconductor layer) 3 is grown on thesecond semiconductor layer 2. Since other steps in the procedure aresubstantially the same as those in FIGS. 13A and 26B, a redundantdescription thereof will be omitted.

The diffusion of the p-type impurity ions (for example, B) in the SiGeis slower than the diffusion thereof in Si. Therefore, the diffusion ofthe p-type impurities from the first semiconductor layer (semiconductorsubstrate) 1 into the third semiconductor layer 3 can be suppressed bythe second semiconductor layer 2.

(Seventh Modification)

In a non-volatile semiconductor memory according to a seventhmodification, as shown in FIG. 28, a SON (Silicon On Nothing) substrateis used in which vacant spaces 19 are present in the vicinity of thesurface of the Si substrate. The vacant spaces 19 of the secondsemiconductor layer 2 have a diameter of approximately several ten toseveral hundred nanometers. The second semiconductor layer 2 includingthe vacant spaces 19 is interposed between the first semiconductor layer1 and the channel regions 411 to 41 n. Thus, current paths between thefirst semiconductor layer 1 and the channel regions 411 to 41 n aredecreased, and substantial resistance increases. Therefore, even if areverse bias is applied, the leak current can be suppressed.

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are the depletiontype or the enhancement type having source and drain regions 421 to42(n+1) and channel regions 411 to 41 n of the same conductivity type.Accordingly, the influence of the short channel effect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the seventh modification, in theprocedure shown in FIGS. 12A and 12B, the first semiconductor layer (Sisubstrate) 1 is prepared, and trenches are formed with a trench width ofseveral tens of nanometers to several hundred nanometers on the firstsemiconductor layer 1 by photolithography technology and etchingtechnology. When the Si substrate on which the trenches are formed areannealed in a hydrogen atmosphere, apexes of the trenches migrate, theapexes adjacent to each other adhere to each other. Insides of thetrenches where the adjacent apexes are adhered to each other retain asthe vacant spaces 19 with a diameter of several ten to several hundrednanometers, and the SON substrate is formed. Thereafter, the thirdsemiconductor layer (SON layer) 3 is epitaxially grown on the surface ofthe SON substrate. Since other steps in the procedure are substantiallythe same as those in FIGS. 13A and 26B, a redundant description thereofwill be omitted.

The p-type impurities in the first semiconductor layer 1 and the secondsemiconductor layer 2 are gettered (catched) on inner surfaces of thevacant spaces 19, and the impurities are accumulated on the innersurfaces of the vacant spaces 19. Thus, the impurity concentration inthe vicinity of the vacant spaces 10 is decreased. Thus, theconcentration gradient of the p-type impurities from the firstsemiconductor layer 1 to the third semiconductor layer (SON layer) 3 isdecreased. Hence, the diffusion of the impurities into the thirdsemiconductor layer (SON) layer 3 can be suppressed. Therefore, it ispossible to suppress deterioration of the transistor characteristics.

(Eighth Modification)

In a non-volatile semiconductor memory according to an eighthmodification, as shown in FIG. 29, the first semiconductor layer 1, as ap⁺-type epitaxial layer, is disposed on a fourth semiconductor layer(semiconductor substrate) 4 of the second conductivity type (n⁺-type).Specifically, it is not necessary for the first semiconductor layer 1 tobe the semiconductor substrate if the first semiconductor layer 1 is ofthe first conductivity type (p-type).

Furthermore, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the eight modification, for example,the p-type first semiconductor layer 1 is epitaxially grown on then⁺-type fourth semiconductor layer 4, and the p-type impurities areion-implanted therein at a predetermined concentration. Subsequently,after the n-type third semiconductor layer 3 is epitaxially grown on thesecond semiconductor layer 2, the n-type impurities are ion-implantedtherein at a predetermined concentration. Note that the first to thirdsemiconductor layers 1 to 3 may be individually formed only by theepitaxial growth without performing any or all of the ion implantationof the p-type impurities into the first semiconductor layer 1, the ionimplantation of the p-type impurities into the second semiconductorlayer 2, and the ion implantation of the n-type impurities into thethird semiconductor layer 3.

Alternatively, after the p-type semiconductor layer 1 is epitaxiallygrown on the n⁺-type fourth semiconductor layer 4, the p-type secondsemiconductor layer 2 is epitaxially grown, and the n-type impuritiesare ion-implanted into the surface of the second semiconductor layer 2.Thus, also, the third semiconductor layer 3 may be formed on the secondsemiconductor layer 2.

Alternatively, after the p-type first semiconductor layer 1 isepitaxially grown on the n⁺-type fourth semiconductor layer 4, then-type third semiconductor layer 3 is grown on the first semiconductorlayer 1, and the p-type impurities are ion-implanted into the bottom ofthe third semiconductor layer 3. Thus, also, the second semiconductorlayer 2 may be formed on the bottom of the third semiconductor layer 3.

Since other steps in the procedure are substantially the same as thosein FIGS. 13A and 26B, a redundant description thereof will be omitted.

(Ninth Modification)

In a non-volatile semiconductor memory according to a ninthmodification, a description will be made of peripheral portions of thememory cells. As shown in FIG. 30, the second semiconductor layer 2 isselectively disposed under the linear arrangement of the memory celltransistors MT₁₁ to MT_(1n), the source region 43 of the select gatetransistor STS₁, and the drain region 45 of the select gate transistorSTD₁. Therefore, the channel regions 42 and 44 of the select gatetransistors STS₁ and STD₁ are brought into contact with the firstsemiconductor layer 1.

Also in this case, in a similar way to the embodiments of the presentinvention, the memory cell transistors MT₁₁ to MT_(1n) are of thedepletion type or the enhancement type, which have the source and drainregions 421 to 42(n+1) and the channel regions 411 to 41 n of the sameconductivity type. Accordingly, the influence of the short channeleffect can be decreased.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory according to the ninth modification, the n-typeimpurities are selectively ion-implanted into regions where the memorycell transistors MT₁₁ to MT_(1n) are formed and regions where the sourceregion 43 and the drain region 421 of the select gate transistor STS₁and the source region 42(n+1) and the drain regions 45 of the selectgate transistor and STD₁ are formed, those regions being in the secondsemiconductor layer 2. Thereafter, the floating gate electrodes 13, theinter-electrode insulating films 14, the control gate electrodes 15, theselect gate electrodes 13 a, 15 a, 13 b and 15 b, the bit line contactplugs 17, and the source line contact plugs 18 are formed. Thus, itbecomes possible to manufacture the non-volatile semiconductor memoryshown in FIG. 30.

The second semiconductor layer 2 is provided between the p⁺-type firstsemiconductor layer (semiconductor substrate) 1 and the channel regions411 to 41 n, and the impurities in the first semiconductor layer 1 canbe thus prevented from being diffused into the channel regions 411 to 41n. Therefore, it is possible to prevent deterioration of the transistorcharacteristics.

Moreover, when the n-type channel regions 411 to 41 n are present on thep-type first semiconductor layer 1, it is not preferable that the p-typeimpurities be diffused into the n-type channel regions 411 to 41 n inthe memory cell regions. However, since the select gate transistors STS₁and STD₁ of the n channels are formed in the select gate regions, it isnecessary that the source region 43 and the drain region 421 of theselect gate transistor STS₁ and the source region 42(n+1) and the drainregions 45 of the select gate transistor STD₁ be of the n type, and thatthe channel regions 42 and 44 under the insulating gates be of the ptype. Accordingly, the third semiconductor layer 3 is not selectivelyprovided in the channel regions 42 and 44 under the insulating gates.Thus, the p-type impurities in the first semiconductor layer (Sisubstrate) 1 are diffused into the n-type third semiconductor layer 3deposited on the channel regions 42 and 44 by the subsequent heatingstep. Therefore, it is possible to form the p-type channel regions 42and 44 of the select gate transistors STS₁ and STD₁ easily.

Moreover, as another example, as shown in FIG. 31, the secondsemiconductor layer 2 is selectively disposed under the lineararrangement of the memory cell transistors MT₁₁ to MT_(1n). Therefore,the channel region 42 and source region 43 of the select gate transistorSTS₁ and the channel region 44 and drain region 45 of the select gatetransistor STD₁ are brought into contact with the first semiconductorlayer 1.

With regard to an example of a method for manufacturing the non-volatilesemiconductor memory shown in FIG. 31, the n-type impurities areselectively ion-implanted into the regions where the memory celltransistors MT₁₁ to MT_(1n) are formed and the regions where the sourceregion 43 and the drain region 421 of the select gate transistor STS₁and the source region 42(n+1) and the drain regions 45 of the selectgate transistor and STD₁ are formed, those regions being in the secondsemiconductor layer 2. The third semiconductor layer 3 is notselectively provided in the regions under the select gate transistorsSTS₁, STD₁, and the bit line contact plugs 17 and the source linecontact plugs 18. The p-type impurities in the first semiconductor layer(Si substrate) 1 are diffused by the subsequent heating step. Therefore,it is possible to form the p-type channel regions 42 and 44 of theselect gate transistors STS₁ and STD₁ easily. Thereafter, the floatinggate electrodes 13, the inter-electrode insulating films 14, the controlgate electrodes 15, the select gate electrodes 13 a, 15 a, 13 b and 15b, the bit line contact plugs 17, and the source line contact plugs 18are formed. Thus, it is possible to provide the non-volatilesemiconductor memory shown in FIG. 31.

(Tenth Modification)

In a method for manufacturing a non-volatile semiconductor memoryaccording to a tenth modification, only the p-type impurities areion-implanted into the entire surface of the n-type channel layer,instead of selectively ion-implanting the p-type impurities into then-type channel layer. Subsequently, the procedures shown in FIG. 14A toFIG. 22B are performed in a substantially similar way.

Then, as shown in FIG. 32, the n-type impurities, such as ³¹P⁺, areion-implanted in a self alignment manner by using the second polysiliconlayer 15 as a mask, followed by the thermal treatment. As a result, then-type impurity ions of the third semiconductor layer 3 are activated,and as shown in FIG. 33, the n⁺-type source and drain regions 421 and422 and source regions 43 are formed. Furthermore, the n-type impurityions are diffused, and the n-type channel regions 411 are formed in then-type channel layer immediately under the floating gate electrodes 13.In a similar way, the n⁺-type source and drain regions 423 to 42(n+1)and the n⁻-type channel regions 412 to 41 n, which are shown in FIG. 1,are formed. The n-type impurity ions are diffused, and the source anddrain regions 421 and the source regions 43 are expanded immediatelyunder the select gate electrodes 13 a and 15 a by a length L_(n). Here,it is satisfactory if a length L_(w1) of the control gate electrodes 15of the memory cell transistor MT₁₁ is set shorter than a length 2L_(n)by which the source and drain regions 421 and the source regions 43 areexpanded, and if a length L_(sg) of the select gate electrodes 13 a and15 a is set to be longer than the length 2L_(n) by which the source anddrain regions 421 and the source regions 43 are expanded.

As shown in FIG. 13A, it is difficult to ion-implant the p-typeimpurities into a part of the length L_(p) of the n-type channel layerwhich forms the select gate transistor STS₁. As opposed to this,according to the tenth modification, the ion implantation is performedin the self alignment manner by using the second polysilicon layer 15 asa mask as shown in FIG. 33, followed by the thermal treatment.Therefore, a dimensional margin of the length 2L_(n) is obtained in thecase of forming the p-type channel length L_(p). Therefore, it ispossible to form the p-type channel regions 42 immediately under theselect gate electrodes 13 a and 15 a easily. Note that it also becomespossible to form the p-type channel regions 44 immediately under theselect gate electrodes 13 b and 15 b of the select gate transistor STD₁,shown in FIG. 1, easily in a similar way.

(Eleventh Modification)

As shown in FIG. 34, a non-volatile semiconductor memory according to aneleventh modification of the present invention may have a two-transistorcell structure which is an expansion of a planar pattern structure of aone-transistor cell structure shown in FIG. 2. The non-volatilesemiconductor memory shown in FIG. 34 comprises a cell array 100 x, acolumn decoder 104, a sense amplifier 102, a first row decoder 101 x, asecond row decoder 101 y and a source line driver 103.

The cell array 100 x comprises a plurality ((m+1)×(n+1)) of memory cellsMC₀₀ to MC_(mn). Each of the memory cells MC includes a memory celltransistor MT and a select transistor ST. A current pathway is connectedin series in each of the cell transistor and the select transistor. Thememory cell transistor MT comprises a stacked gate structure including:a floating gate electrode formed above a semiconductor substrate with agate insulating film interposed between the floating gate electrode andthe semiconductor substrate; and a control gate electrode formed abovethe floating gate electrode with an inter-electrode insulating filminterposed between the control gate electrode and the floating gateelectrode. A source region of the memory cell transistor MT is connectedto a drain region of the select transistor ST. Each of two memory cellsMC adjacent to each other in the column direction share the sourceregion of the select transistor ST or the drain region of the memorycell transistor MT.

The control gate electrodes of the respective memory cell transistors MTof the respective memory cells MC in the same row are commonly connectedto one of word lines WL0 to WLm. The gates of the respective selecttransistors ST of the respective memory cells in the same row areconnected to any one of select gate lines SG0 to SGm. The drain regionsof the respective memory cell transistors MT of the respective memorycells MC in the same row are commonly connected to one of bit lines BL0to BLn. The sources of the respective select transistors ST of therespective memory cells MC are commonly connected to a source line SL,and the source line SL is connected to a source line driver 103.

The column decoder 104 decodes a column address signal, therebyobtaining a column address decoded signal. One of the bit lines BL0 toBLn is selected based on the column address decoded signal. The firstand second row decoders 101 x and 101 y decode a row address signal,thereby obtaining a row address decoded signal. The first row decoder101 x selects one of the word lines WL0 to WLn when writing isinitiated. The second row decoder 101 y selects one of the select gatelines SG0 to SGm when reading is initiated. The sense amplifier 102amplifies data which have been read out from a memory cell selected bythe second row decoder 101 y and the column decoder 104. The source linedriver 103 supplies a voltage to the source line SL during reading.

According to the eleventh modification, the non-volatile semiconductormemory comprises the two-transistor cell structure, so that the memorycell MC is positively cut off, and thus enabling a reading operation tobe performed. In addition, a three-transistor cell structure in which aselect transistor ST is connected to both a source region and a drainregion for each of the memory cell transistors MT can be easily expandedfrom the planar pattern shown in FIG. 2.

(Twelveth Modification)

As a twelveth modification of the present invention, a description willbe provided for a flash memory system 142, which is an applied exampleof the non-volatile semiconductor memory shown in FIG. 1, with referenceto FIG. 35. The flash memory system 142 comprises a host platform 144and a universal serial bus (USB) flash device 146. The host platform 144is connected to the USB flash device 146 through a USB cable 148. Thehost platform 144 is connected to the USB cable 148 through a USB hostconnector 150, and the USB flash device 146 is connected to the USBcable 148 through a USB flash device connector 152. The host platform144 comprises a USB host controller 154 for controlling packet transferon the USB.

The USB flash device 146 includes: a USB flash device controller 156 forcontrolling other elements in the USB flash device 146, and forcontrolling an interface to the USB bus of the USB flash device 146; aUSB flash device connector 152; and at least one flash memory module 158including a non-volatile semiconductor memory according to an embodimentof the present invention.

Once the USB flash device 146 is connected to the host platform 144, astandard USB listing process is started. At this point, the hostplatform 1414 recognizes the USB flash device 146, and selects a mode ofcommunications with the USB flash device 146. Then, the host platform144 transmits data to, and receives data from, the USB flash device 146through an FIFO buffer, referred to as an endpoint, for storingtransmitted data. The host platform 144 recognizes changes in physical,electrical conditions such as disconnection and connection of the USBflash device 146 and the like through the endpoint. In addition, ifthere is a packet to be received, the host platform 144 receives it.

The host platform 144 requests a service from the USB flash device 146by transmitting a request packet to the USB host controller 154. The USBhost controller 154 transmits a packet through the USB cable 148. If theUSB flash device 146 has an endpoint which receives this request packet,the requests are received by the USB flash device controller 156.

The USB flash device controller 156 performs various operations such asreading data from the flash memory module 158, writing data to the flashmemory module 158, erasing data and the like. In addition, the USB flashdevice controller 156 supports basic USB functions such as theacquisition of a USB address and the like. The USB flash devicecontroller 156 controls the flash memory module 158 through a controlline 160 for controlling output from the flash memory module 158, or,for example, through a read/write signal and various other signals suchas a chip enable signal and the like. The flash memory module 158 isalso connected to the USB flash device controller 156 through an addressdata bus 162. The address data bus 12 transfers a read command, a writecommand and an erase command as well as an address and data in the flashmemory module 158.

In order to inform the host platform 144 of a result and the state ofvarious operations requested by the host platform 144, the USB flashdevice 146 transmits a state packet by use of a state endpoint (endpoint0). At this point, the host platform 144 checks whether or not there isa state packet, and the SB flash device 146 returns an empty packet orthe state packet if there is no new packet of a state message.

According to the twelveth modification, various functions of the USBflash device 146 can be achieved. By eliminating the USB cable 148, theconnectors may be connected directly.

OTHER EMBODIMENTS

Various modifications will become possible for those skilled in the artafter receiving the teachings of the present disclosure withoutdeparting from the scope thereof.

In the embodiment, m×n memory cell transistors MT₁₁ to MT_(1n), MT₂₁ toMT_(2n), . . . , MT_(m1) to MT_(mn) are explained. However, actually, acell array may be comprised by a larger plurality of memory celltransistors, memory cells and blocks.

Furthermore, in the embodiment, a binary NAND EEPROM is described.However, it is possible to adapt a multi-level storage, for example, athree-level or more storage in the NAND EEPROM.

Furthermore, with regard to an example of a method for manufacturing thenon-volatile semiconductor memory according to the embodiment, in theprocedure shown in FIGS. 12A and 12B, fluorine (F) or borondifluoride(BF₂) may be ion-implanted in the vicinity of the surface of the p-typefirst semiconductor layer (semiconductor substrate) 1, followed by thethermal treatment thereof, and the second semiconductor layer 2 is thusformed.

Otherwise, in the procedure shown in FIGS. 12A and 12B, a p-type orn-type epitaxial layer is formed on the p-type first semiconductor layer(semiconductor substrate) 1. Subsequently, fluorine (F) orborondifluoride (BF₂) may be ion-implanted into the epitaxial layer,followed by the thermal treatment thereof, and the second semiconductorlayer 2 is thus formed.

Furthermore, in the embodiment, a stacked gate structure of the floatinggate electrode 13 and the control gate electrode 15 is described, asshown in FIG. 1. However, it is possible to adapt aMetal-Oxide-Nitride-Oxide-Silicon (MONOS) structure, as shown in FIG.36. The memory cell transistors MT₁₁ to MT_(1n) include a tunnel oxidefilm 12, a nitride film 131, an oxide film 141 and control gateelectrodes 151 to 15 n. Electrons are trapped by trappes in the nitridefilm 131 in written operation. The select gate transistors STS₁ and STD₁include gate electrodes 15 x and 15 y, respectively.

Furthermore, in the embodiment, the plurality of vacant spaces 19 areformed in Silicon On Nothing (SON) layer 2, as shown in FIG. 28.However, actually, 1-NAND string has a length of about 3 to 5 μm.Therefore, at least one vacant space 19 may be formed under the memorycell transistors MT₁₁ to MT_(1n) between the select gate transistorsSTS₁ and STD₁, as shown in FIG. 37.

1. A method for manufacturing a non-volatile semiconductor memory comprising: forming a second semiconductor layer on a first semiconductor layer having a first conductivity type; forming a third semiconductor layer having a second conductivity type on the second semiconductor layer; forming a gate insulating film on the third semiconductor layer; depositing a first conductive layer on the gate insulating film; depositing an insulating film on the first conductive layer; depositing a second conductive layer on the insulating film; forming a groove penetrating the second conductive layer, the insulating layer and the first conductive layer so as to define a control gate electrode, an inter-electrode insulating film under the control gate electrode and a floating gate electrode under the inter-electrode insulating film; and forming a memory cell transistor comprising a source region having the second conductivity type, a drain region having the second conductivity type and a channel region having the second conductivity type in the third semiconductor layer by ion implantation to the third semiconductor layer through the groove.
 2. The method of claim 1, further comprising: forming the first semiconductor layer on a semiconductor substrate before forming the second semiconductor layer. 